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FPA-3000MR STEPPER

 

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The FPA-3000MR is an i-line stepper for exposing the magneto-resistant heads used mainly in advanced data storage devices. It has a large-field two-to-one reduction projection lens and can expose a 50-millimeter square area in one shot.

System Highlights

  • 6-inch wafers

  • 52mm x 47.9 mm field size

  • 0.24 NA (Numerical Aperture)

  • 0.80µm Resolution


Specifications

 

FPA-3000MR

i-Line (365nm) Stepper

Resolution

0.80µm

NA

0.24

Reticle Size

6-in. (0.25-in. thick); optional 5 in.

Reduction Ratio

2:1

Field Size

52mm x 47.9mm

Overlay Accuracy

M+3 100nm

Throughput

100wph (6-in)

 

Overview


Large field 2:1 lens. The FPA-3000MR can expose a 50mm-square area in one shot. In addition to its wide field size, it has an air-bearing X-Y stage and a high-speed reticle changer for throughput capability above 100 wph on 6-in. substrates.

High compatibility with resist process. With high resolution and depth of focus, plus a job-linked sigma variable feature to achieve optimum illumination, ensure high productivity over a wide range of resist process.

High precision alignment system. The FPA-3000MR alignment system provides two Off Axis methods to reduce the effect of resist coverage and increase process margin. It also has an option mark function for processes in which alignment marks are difficult to form.

 

 

 
 
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