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Always another step
Articles
“Lithography & etch process development
of 50nm line patterning using SCAA mask & Si-contained
bi-layer resist” - This study concludes that
bi-layer resist, used with the SCAA mask and an ultra-high
NA (>0.80) ArF or KrF exposure tool, can resolve certain
obstacles that limit the implementation of Alt-PSM—namely,
space-width alternation or other anomalies at different
focus—and can extend optical lithography to sub-50
nm regime for processes where pitch size is not a limiting
factor.
“Collaboration essential for every next step
in optical lithography” - As each functional
portion of the lithographic imaging process becomes more
critical, it becomes more dependent on all other functions
surrounding it. Because of this growing interdependency,
often referred to as image process integration, Canon is
strengthening its collaboration with sub-100nm processing
partners.
“RET-The search for simple freedoms”
- Extensive efforts in all three areas of Resolution
Enhancement Technology- exposure tools, processes and masks-
have moved lithography well beyond its supposed limitations,
but often at a constraining price. In this article, "Dr.
Optics" sets the stage for a newly discovered freedom
in exposing contact holes- one of the most difficult pattering
problems for optical lithography.
“The Canon FPA-6000 single-stage 45nm scanning
platform” - Specifications and graphics back
up the introduction of Canon's new single-stage platform
that "meets KrF, ArF, and F2 production specs...today!"
The article details the two Canon scanner models, the FPA-6000ES5
and the FPA-6000AS4, built on this compact new platform.
“Defocus as an Aberration”
- In a continuing tutorial, two previously discussed topics—focus
control and impact of focus on the resist profile—are
advanced to explain that defocus can be thought of as causing
a wavefront error in the same way an aberration does.
“Taking the next step in illumination. The
Cymer MOPA laser.” - In interview format,
Robert P. Akins, President and Chief Executive Officer,
Cymer, Inc., gives the rationale for his company's new family
of light source products using a dual-chamber design called
MOPA (Master Oscillator Power Amplifier).
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Summer 2002
Volume 7, Issue 2
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More than ever it takes working together
Articles
“300mm wafer CD uniformity for 0.18um and
0.15um photoresist” - This study using a
Canon FPA-5000ES2 Scanner (NA 0.68) and an FSI International
Polaris® 3500 Microlithography Cluster, was conducted
to determine the capabilities of this 300mm tool set to
achieve uniform critical dimensions for 0.18mm and 0.15mm
photoresist features. Results are reported for within-wafer
and wafer-to-wafer uniformity.
“What does it take to be a Leader? A deeper
focus on excellence.” - When outlining Phase
2 of Canon's overall Excellent Global Corporation Plan,
Fujio Mitarai, President and CEO of Canon, Inc., stated
that the company should own the market in its main product
lines—including semiconductor production equipment.
This article defines the necessary marketing emphasis and
overarching commitment to excellence.
“Spherical abberation” - New
photoresists, and resolution enhancement technologies that
use the peripheral portion of the pupil, make removal of
the spherical aberration of greater importance than ever
before. This "Dr. Optics" article explores the
phenomenon affecting the performance of all imaging points.
“A well-tested 200mm/ 300mm bridge to 100nm
patterning: Introducing the newest Canon toolset.”
- A detailed presentation of Canon's line-up of thoroughly-proven
5000-Series tools, from ArF through i-line, including the
300mm-ready FPA-5500iX wide-field i-line stepper.
“The cause of asymmetry” -
In this regular tutorial feature, a theory is presented
stating that the cause of observed asymmetry between plus
and minus focus invoves the way the arerial image interacts
with the photoresist to produce the final CD.
“Immersion lithography at 157nm”
- In this Q&A-style article, researchers at MIT's Lincoln
Laboratory explain the principles and give their preliminary
findings on a method of resolution enhancement that has
the potential to extend optical lithography two technology
nodes for each wavelength.
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Spring 2002
Volume 7, Issue 1
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