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2003 Issues
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| LITHOGRAPHY EVOLVES |
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| From Advanced Systems to Optimized Solutions |
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| Articles |
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| IC Imaging Productivity Program Nearing Roll-Out - Chief applications engineer, Tommy Oga, describes the infrastructure and status of "Optimized Imaging," a comprehensive litho tool support and integration program soon to be offered to U.S. customers through the recently formed National Applications Engineering Group. The new high-value added program will address the complexities, constraints and critical timelines of sub-150nm device manufacturing. |
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| Resolution Enhancement Techniques for the 90nm Technology Node and Beyond - A team from Applied Materials, Canon, and Synopsys report on their evaluation of multiple resolution enhancement strategies relative to device layer and structure. The article gives details on advanced processes for patterning 50nm polysilicon gate lines, at least 130nm device contacts, and via chains in 120nm wide trenches in low-k dielectric films for dual-damascene copper interconnect lines. NOTE: An expanded version of this article first appeared in "The Future Fab International" Issue 15, July 2003. |
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| Comatic Aberration and Isofocal Deviation - Comatic aberration is a typical asymmetrical aberration. Isofocal deviation (IFD) involves astigmatism and field curvature. The characteristics of a plot of the best focal point in an exposure field are labeled IFD. Here, "Dr. Optics" (Dr. Akiyoshi Suzuki, General Manager, Optical Research Division 4, Canon Optics Technology Center) examines this basic aberration in detail. |
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| Should we get our feet wet? - Looking further in to liquid immersion lithography - By Mr. Steve Brueck, director of the University of New Mexico's Center for High Technology Materials. His discussion of 193nm liquid immersion lithography ranges from "will it work" to what competing technologies might need to be sacrificed. Postdoctoral scientist Abani Biswas and graduate student Alex K. Raub also contributed to the results reported in this discussion. |
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| Lithography as Information Transfer - Chris A. Mack, KLA-Tencor, FINLE Division, changes the perspective on lithography imaging by defining it as a sequence steps for transferring information about edge positions from the design data to the proper place on a wafer. He proposes tracking the inevitable loss of information at each step by a suitable metric of information content, then using it to optimize the lithography process. |
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| Flowing it all together - Strategic marketing manager Ray Morgan writes that the nodes below 100nm are not places to go alone. They invoke even greater joint efforts to achieve tool and process integration, reticle optimization and resist development. He describes this dynamic as the confluence of three highly opportune forces that work strongly to the advantage of chipmakers who are ready to move to < 100nm technology nodes. Namely, information transfer, technology blending, and proaction time. |
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| Go Below 100nm with KrF with Great Process Latitude: Announcing the Canon FPA-6000ES6 Scanner - With higher resolution, greater intensity, broader variability-and still the fastest scan speed-the FPA-6000ES6 KrF scanner supports the steady migration of 248nm lithography into the sub-100 nm node. Its combination of extremely high NA (0.86) and equally high sigma (0.93) make this very high-throughput, very low-k1-capable scanner the ultimate KrF model. |
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Summer 2003 |
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Volume 8, Issue 2 |
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| If you would like copies of SubMicron Focus please Click Here to go to the Contact Page and fill in the Registration Form. |
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| ALIGNING THE ROI ROADMAP |
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| Simpler, Smarter Imaging Options |
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| Articles |
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| Canon 157nm update: Bring on the scanners - At the 4th International Symposium on 157nm Lithography, all eyes will be on the first 157nm scanners. This article is the Canon "Report Card" on its program to complete a full-field first-generation F2 scanner system by the fourth quarter of 2003; followed by a full production tool, the FPA-6000FS2, in early 2005. |
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| NGL: Outlook and Insights - Canon's EUV lithography (EUVL) program- reviews its applicable pioneering work with soft X-ray, its progress in building the infrastructure for building EUVL tools (including a new reflectometer), and its at-wavelength metrology.work with EUVA, a Japanese research consortium. But the article also reports on Canon's other NGL initiative, the Maskless ML2 lithography program. |
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| Zernike Polynomials... - Dr. Optics draws up a new appreciation of Zernike Polynomials, including a discussion of how to analyze wavefront maps. |
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| A Mission Statement That Maps Reality - The U.S. Semiconductor Equipment Divison's new mission statement is the "marching orders" for its strong role in Canon's move to lithography leadership. Namely, to become the foremost partner of lithography customers who operate in or from within the U.S. market. |
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| Lithography and the Back End of the Line - Chris A. Mack gives the matter of wiring together the transistors after gate patterning, known as BEOL processing, the attention it deserves as a critical contributor to circuit performance. SPECIAL NOTE: Chris Mack has contributed to all 20 issues of SubMicron Focus. |
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| Canon at SPIE Microlithography 2002 - In addition to announcing a new exhibition booth and special events and sponsorships, this section provides a synopsis of all Canon papers presented. |
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| Extending ArF to the 65nm node - In this guest article, Frank Driessen, Numerical Technologies, Inc., presents a shifting technique called Full Phase that indicates the industry can reliably extend 193nm lithography to the 65nm process node using today's lenses. |
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| Mechatronics: Finessing the roadmap. - The story behind the Canon FPA-6000 platform design. Dr. Shigeyuki Uzawa, who led the the FPA-6000 platform development project, describes how the close integration of intelligent ultra-precision dynamic systems and subsystems across enables Canon's latest platform to achieve performance to the 45nm node. |
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Winter/ Spring 2002-2003 |
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Volume 8, Issue 1 |
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| If you would like copies of SubMicron Focus please Click Here to go to the Contact Page and fill in the Registration Form. |
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