|
 |
 |
| |
|
2004 Issues
|
|
|
| |
| Extreme KrF !
|
| |
| Extending to 100...90...80nm |
| |
| Articles |
| |
| "KrF/X - It's about the bottom line!"
- Ultra-high NA KrF photolithography system, along with new light sources, advanced reticle enhancement techniques and compound resist schemes can reliably expose sub-100nm and even sub-90nm device geometries. |
| |
| "Extending KrF Beyond Normal Limits" - Article by Cymer Product Marketing Manager Charles Sheets, outlines the evolution of KrF light sources - particularly Cymer's ELS-7010 - to support increasing performance to pattern shrinking CDs, and dramatically improve module lifetimes that result in significantly reduced consumables costs. |
| |
| "Showcase: FPA-6000ES6 and FPA-5500iZ+" - This article showcases two new Canon exposure tools to help IC manufacturers extend their KrF and/or i-line investment - in capital, experience and skill - by one or two more technology nodes. |
| |
| "The Fundamental of IDEALSmile" - This article traces the evolution from IDEAL to IDEALSmile and explains the unique value of this new single-exposure RET for printing contact holes. A sidebar article captures the main elements of a more detailed technical report "Imaging 90nm Flash memroy contact holes with ArF/IDEALSmile," written by a multi-company team including STMicroelectronics, Mentor Graphics, and Canon's Kenji Saitoh |
| |
| "The Basic Issues of Immersion Lithography: Part 1" - "Dr Optics" - Dr. Akiyoshi Suzuki of Canon - begins a discussion of several optical challenges that immersion lithography presents at any wavelength - including KrF (248nm). With figures and formulas he covers the principles of the refractive index and gives thorough explanation of the thoroughly manageable "bubble" issue. |
| |
| The Vector Nature of Light - Chris A. Mack, KLA-Tencor FINLE Division, turns to the reasons why very high NAs might produce less than expected image contrast. Why do different polarizations image differently? Why does an electric field have a vector direction, and how does it affect lithographic image quality? WHat might come from polarized illuminators that take advantage of the "good" polarization? |
| |
| "Foundations for Success - Focusing on Growth" - In April 2004, Junji Ichikawa became the Group Executive of Canon Optical Products Operations. Here he talks about Canon's strong commitment and growing investment in IC lithography and micropatterning leadership. In addition to lithography technology development, he also stresses production values - quality and delivery time - as essential to helping Canon customers achieve higher uptime and greater productivity
|
| |
|
|
|
Summer 2004 |
|
Volume 9, Issue 2 |
 |
|
| If you would like copies of SubMicron Focus please Click Here to go to the Contact Page and fill in the Registration Form. |
| |
| Ultra Optics |
| |
| Reaching Extreme Limits |
| |
| Articles |
| |
| "Decision 2004: Wet or Dry, Photolithography Approaches New Crossroad" - Imagine a crossroad with three directional arrows. One points straight ahead to "193nm dry" (ArF with >0.90 NA), one to "193nm wet" (ArF immersion), and one to "157nm F2". We explore all three routes, and urges prompt consideration of the key driving decisions regarding the development of lithography systems and patterning technology for the 45nm node. Key points and tables touch on the status of Canon's hyper-NA 193nm system, immersion lithography platform, 157nm pre-production tool, and EUVL and maskless lithography programs. |
| |
| "The Prospect of Photoresists for ArF Immersion Lithography" - A team of prominent researchers representing ISMT, UNM, UT, and RIT prepared this article. Noting that 193nm (ArF) liquid immersion lithography has the potential to extend optical lithography to meet the needs of the 32nm semiconductor device nodes and beyond, the team reports what they have encountered in seeking to understand the effects of photoresist issues and components leaching, water absorption and general image quality to present photoresist formulations. Also under investigation are: polarization, high NA effects and general imaging requirements. |
| |
| "Evaluation and Control of Mid-Range Flare in ArF Expsoure Tools" - Mid-range flare (MRF) is a result of scattered light at a relatively small angle to the nominal ray at a lens glass surface - and so a problem for low k1 lithography and perfect CD control. The highly detailed SPIE-styled paper by Canon researchers led by Kazuhiro Takahashi examines the relationship between the key contributors of MRF - ie., lens surface roughness and glass homogeneity - and flare itself. The relationship between wavefront aberration and MRF is drawn as well from the scatter at the surface. Overall, the article presents the concept of simulating optical performance with MRF based on experimentation, and shows evaluation and target setting methods. |
| |
| "Immersion Lithography: Impedance Matching of Optics and Resist Layers" - Veteran optics expert Dr. Akiyoshi Suzuki recalls that immersion was first proposed for use in IC imaging in the early 1980's, and that in 1992, i-line immersion was examined as an alternative method to KrF lithography. Then he proceeds to discuss its present renaissance - for 193nm (ArF) lithography - which appears to offer benefits much greater than before. The article opens the way for future discussion and reports on other issues within the optical path, such as polarization, fluctuation of the liquid, bubbles, and design of the projection optics. |
| |
| "Why Chemically Amplified Resists?" - Without using even one chicken wire chemical diagram or alphabet soup formula, Chris A. Mack, KLA-Tencor, FINLE Division, traces the history of resist technology from the early diazonaphthoquinone (DNQ) sensitizer and novolac polymer resin to today's chemically amplified forms, in particular polyhydroxy styrene (PHOST), a transparent polymer. |
| |
| "Going Beyond the Extreme" - In his Q&A discussion of the development and actualization of hyper NA (numerical aperture) optical systems, Dr. Akiyoshi Suzuki, chief of Canon's Future Lithography Strategy project, takes readers beyond the amazing numbers, such as NA>0.90 which allows 45nm imaging using ArF (193nm dry) lithography systems with strong RET. Discussion covers system design and process integration, and Canon's plans to incorporate hyper NA into a new scanner. |
| |
|
|
|
Spring 2004 |
|
Volume 9, Issue 1 |
 |
|
| If you would like copies of SubMicron Focus please Click Here to go to the Contact Page and fill in the Registration Form. |
| |
|
| |
|
