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BC7000 Atomic Diffusion Bonding

Wafer Bonding


No heating is required as the bonding occurs are room temperature
Because of the high surface energy of the bonding surfaces, application of pressure is not required
The resulting bond has high strength, excellent reliability and high endurance owing to the metal bond
Any wafers, even of dissimilar materials, can be bonded, because the bonding takes place in the deposited thin metal film
  • Advanced Packaging
  • Power device
  • Optical device
  • LED
  • RF device
  • MEMS

  • System configuration: Cluster type
  • Substrate: Φ100 mm, Φ150 mm
  • Main pump: Turbo Molecular Pump (TMP)
  • Electric power: 3Φ, AC 200 V ±10%, 125 A, 50/60 Hz
  • Cooling water: 30-34 L/min, 0.2-0.3 MPa, 15-30 ℃
  • Compressed air: 0.5-0.8 MPa
  • Process Gas: 0.15-0.4 MPa
  • Throughput: 3.5 min/set (Depends on process condition)
  • Weight: 3720 kg (Main body)
  • Footprint: W3300 mm × D5100 mm (Standard configuration)

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† Prices and specifications subject to change without notice. Actual prices are determined by individual dealers and may vary.

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