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FPA-3030i5+ Stepper


Nanoimprint Lithography

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  • FPA-3030i5+ imaging system provides 0.35µm resolution with a flexible optical system and lens

  • FPA-3030i5+ platform enhancements help provide alignment accuracy and reliability

  • FPA-3030i5+ platform supports optional equipment designed to process special environmentally-conscious device substrates

  • FPA-3030i5+ platform electrical control system and software are modernized to help support future semiconductor manufacturing

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Model Type

i-Line (365 nm) Stepper

Wafer Size

200 mm; 150 mm


≤0.35 µm

Numerical Aperture (NA)

0.45 ~ 0.63

Reticle Size

6 in. (0.25 in. thick); optional 5 in.

Reduction Ratio


Field Size

22 mm x 22 mm

Overlay Accuracy

≤40 nm (|m| + 3σ)


≥104 wph (200 mm)
≥120 wph (150 mm)

† Prices and specifications subject to change without notice. Actual prices are determined by individual dealers and may vary.

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