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FPA-5510iV Stepper


Nanoimprint Lithography

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  • The FPA-5510iV has a 2:1 reduction Projection Lens and a low Numerical Aperture, providing a wide-field exposure and a deep Depth of Focus

  • The FPA-5510iV Through-Silicon Alignment (TSA) option allows the stepper to perform infrared wafer frontside and backside alignment measurement of bonded wafers

  • The FPA-5510iV wafer handling and stage system options are designed to process severely warped and distorted wafers

  • The FPA-5510iV Resist Exhaust Outgas Unit option protects the lens from degradation due to thick-resist outgassing

  • The FPA-5510iV offers a variety of options originally developed for the 5500 Body Steppers that are designed to increase productivity and performance

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Model Type


Wafer Size

300 mm, 200 mm


≤1.50 µm

Numerical Aperture (NA)

0.10 - 0.18

Reticle Size

6 in. (0.25 in. thick)

Reduction Ratio


Field Size

52 mm x 34 mm

Overlay Accuracy

≤300 nm (|m| + 3σ) frontside
≤300 nm (|m| + 3σ) backside (option)

† Prices and specifications subject to change without notice. Actual prices are determined by individual dealers and may vary.

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