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FPA-3030i5a Stepper

Steppers

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Features

FPA-3030i5a supports ≤ 200 mm diameter substrates
  • Wafer sizes from 50 mm (2 inch) to 200 mm (8 inch) diameter are supported
  • Designed to enable processing of transparent and compound semiconductor wafer materials including sapphire, silicon carbide (SiC) and gallium nitride (GaN)
  • FPA-3030i5a stepper multi-wafer handling options support automated processing of 2 wafer sizes
FPA-3030i5a adopts a flexible off-axis alignment scope
  • Off-axis alignment scope optical path does not pass through the projection lens
  • Off-axis alignment allows the use of a wide range of alignment illumination wavelengths to measure alignment marks. Illumination wave length band can be optimized according to wafer conditions
  • FPA-3030i5a alignment system enables alignment measurement using Dark-Field field illumination to enhance process robustness
  • Infrared TSA (Through Silicon Alignment) is available as an option to support backside alignment processes
Newly redesigned hardware and software can reduce Cost-of-Ownership
  • FPA-3030i5a productivity enhancements include software upgrades, adoption of a new alignment scope that shortens alignment mark measurement time and a faster wafer transfer system
  • Productivity is improved approximately 17% (200 mm wafers) compared to the predecessor FPA-3030i5+ stepper
  • New chamber temperature control system can reduce power consumption approximately 20% compared to the FPA-3030i5+

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Specifications

Model Type

i-Line (365 nm) Stepper

Wafer Size

50 mm, 75 mm, 100 mm, 150 mm, 200 mm

Resolution

≤0.35 µm

Numerical Aperture (NA)

0.45 ~ 0.63

Reticle Size

6 in. (0.25 in. thick); optional 5 in.

Reduction Ratio

5:1

Field Size

22 mm x 22 mm

Overlay Accuracy

≤40 nm (|m| + 3σ)

† Prices and specifications subject to change without notice. Actual prices are determined by individual dealers and may vary.

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