• Equipped with cassette chamber and transfer chamber (C to C specification)
• Delivers excellent deposition uniformity
• Able to accommodate a variety of process modules according to application
• Provides high target utilization with rotary magnetron cathode

• Capable of film composition control through ultrahigh vacuum co-sputtering
• Precise control of film thickness at sub-nanometer level
• Excellent uniformity (1σ < 1%).
• Low material cost through use of compact cathode
• Easy material changeover

Features 

• Offers excellent film thickness distribution of ±1 % or less with the use of LRP (Low Pressure Remote Plasma) sputtering technology
• Provides very flat and low resistance films with low pressure discharge at 0.02 Pa, which is an order of magnitude lower than conventional sputtering pressure
• Provides high MR ratio
• Extensive deposition module lineup 
• Multi-cathode modules

Applications 

• Magnetic read head production 

Features 

• Variable cathode magnet position (in 3D) using recipe, enabling easy optimization of film uniformity and target cleaning
• Provides world's highest standard throughput (80 wafers/hour) 
• Provides > 90 % uptime in semiconductor memory production line
• Failure rate < 1 % 

Applications 

• Semiconductor memory (for metal wiring material) mass production 

Features 

• Provides approximately twice the productivity (up to 1800 disks/hour) compared to competitive equipment
• Over ten days of continuous operation 
• Flexible configuration enabling addition of chambers according to process needs
• Emphasis on vacuum quality to improve magnetic characteristics 
• Provides high temperature heating and cooling unit for the development of next generation thermally assisted magnetic recording media
• 30 % space reduction compared to our previous product 

Applications 

• Mass production and development of next generation hard disk 

Features 

• Ultra high vacuum and oblique sputtering technology
• Excellent interfaces within the MTJ stack
• Compatible with planar & perpendicular MTJ deposition
• High throughput (25 wafers/h) with perpendicular MTJ stack process 

Applications 

• MRAM and STT-MRAM mass production