• Capable of film composition control through ultrahigh vacuum co-sputtering
• Precise control of film thickness at sub-nanometer level
• Excellent uniformity (1σ < 1%).
• Low material cost through use of compact cathode
• Easy material changeover

Features 

• Variable cathode magnet position (in 3D) using recipe, enabling easy optimization of film uniformity and target cleaning
• Provides world's highest standard throughput (80 wafers/hour) 
• Provides > 90 % uptime in semiconductor memory production line
• Failure rate < 1 % 

Applications 

• Semiconductor memory (for metal wiring material) mass production 

Features 

• Ultra high vacuum and oblique sputtering technology
• Excellent interfaces within the MTJ stack
• Compatible with planar & perpendicular MTJ deposition
• High throughput (25 wafers/h) with perpendicular MTJ stack process 

Applications 

• MRAM and STT-MRAM mass production