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FC7100 Metal Gate PVD Equipment
Product Highlights
Product Highlights- Capable of film composition control through ultrahigh vacuum co-sputtering
- Precise control of film thickness at sub-nanometer level
- Excellent uniformity (1σ < 1%).
- Low material cost through use of compact cathode
- Easy material changeover
- Capable of film composition control through ultrahigh vacuum co-sputtering
- Precise control of film thickness at sub-nanometer level
- Excellent uniformity (1σ < 1%).
$0.00Out Of Stock -
IC7500 Memory Wire PVD Equipment
Product Highlights
Product HighlightsFeatures
- Variable cathode magnet position (in 3D) using recipe, enabling easy optimization of film uniformity and target cleaning
- Provides world's highest standard throughput (80 wafers/hour)
- Provides > 90 % uptime in semiconductor memory production line
- Failure rate < 1 %
Applications
- Semiconductor memory (for metal wiring material) mass production
- Variable cathode magnet position (in 3D) using recipe, enabling easy optimization of film uniformity and target cleaning
- Provides world's highest standard throughput (80 wafers/hour)
- Provides > 90 % uptime in semiconductor memory production line
$0.00Out Of Stock -
NC7900 MRAM PVD Equipment
Product Highlights
Product HighlightsFeatures
- Ultra high vacuum and oblique sputtering technology
- Excellent interfaces within the MTJ stack
- Compatible with planar & perpendicular MTJ deposition
- High throughput (25 wafers/h) with perpendicular MTJ stack process
Applications
- MRAM and STT-MRAM mass production
- Ultra high vacuum and oblique sputtering technology
- Excellent interfaces within the MTJ stack
- Compatible with planar & perpendicular MTJ deposition
$0.00Out Of Stock