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EC7200 SiC Activation Equipment

High Temperature Annealing

  • High electrical activation through high temperature process to achieve low sheet resistance and reduction of diode leak current
  • Rapid heating and cooling in clean vacuum environment
  • Excellent repeatability (sheet resistance uniformity ± 4.9%, 1000 wafers run)
  • Supports up to three annealing chambers according to production volume

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  • System configuration: Cluster type (up to three process chambers)
  • Substrate Size: Φ150 mm, Φ100 mm, Φ75 mm

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† Prices and specifications subject to change without notice. Actual prices are determined by individual dealers and may vary.

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