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FC7100 Metal Gate PVD

Semiconductor Device Manufacturing

  • Capable of film composition control through ultrahigh vacuum co-sputtering
  • Precise control of film thickness at sub-nanometer level
  • Excellent uniformity (1σ < 1%).
  • Low material cost through use of compact cathode
  • Easy material changeover

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  • System configuration: Cluster type
  • Substrate: Φ300 mm

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† Prices and specifications subject to change without notice. Actual prices are determined by individual dealers and may vary.

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